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From: Jan Panteltje <alien@comet.invalid>
Newsgroups: sci.electronics.design
Subject: Breakthrough in next generation memory technology
Date: Thu, 13 Jun 2024 01:20:13 GMT
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Breakthrough in next-generation memory technology!
 https://www.sciencedaily.com/releases/2024/06/240612113338.htm
Source:
    Pohang University of Science & Technology (POSTECH)
Summary:
    Scientists maximize the efficiency of hafnia-based ferroelectric memory devices. 

Multi-level ferromagnetic memory on a chip.