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Date: Wed, 8 May 2024 05:31:35 -0700
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From: DFS <nospam@dfs.com>
Subject: Re: Windows advantage: quality of applications
Newsgroups: comp.os.linux.advocacy
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On 5/6/2024 11:46 PM, vallor wrote:
> On Mon, 6 May 2024 17:19:55 -0400, DFS <nospam@dfs.com> wrote in
> <6639497b$0$6450$882e4bbb@reader.netnews.com>:
> 
>> On 5/6/2024 2:43 PM, vallor wrote:
>>> On Mon, 06 May 2024 14:29:47 -0400, Joel <joelcrump@gmail.com> wrote in
>>> <ib8i3jpsn8qgcsl4l3a5lin9lan9men5t1@4ax.com>:
>>>
>>>> vallor <vallor@cultnix.org> wrote:
>>>>
>>>>> https://imgur.com/tpY1als
>>>>
>>>>
>>>> I got that easily with Mint Software Manager.  Works very well.  DFS
>>>> is easily impressed.
>>>
>>> I don't think there was anything in his pretty gui that couldn't
>>> be sussed-out through the Linux command line -- either by examining
>>> /proc or /sys; or running tools like dmidecode, cpuid, lscpu, or lsmem
>>> (to name a few).
>>
>>
>> Hours if not days of combing thru command-line output to assemble what
>> HWiNFO for Windows shows in 2 seconds, in a perfect and easily navigated
>> layout.
> 
> Hours if not days?  Exaggerate much?

That statement lets me know you haven't taken even a casual glance at 
HWiNFO.

I seriously doubt you can use any or all Linux tools to duplicate the 
info provided by HWiNFO (Windows).



> You should try dmidecode -- I think it's been ported to Windows.  

https://gnuwin32.sourceforge.net/packages/dmidecode.htm


> Handy for things like discovering what memory is installed in a machine,
> including brand name, part number, and serial number.

zowie!   For memory modules, HWiNFO only gives you:

--------------------------------------------------------------------

  [General Information]
   Total Memory Size:                      16 GBytes
   Total Memory Size [MB]:                 16384
  [Current Performance Settings]
   Maximum Supported Memory Clock:         Unlimited
   Current Memory Clock:                   1855.6 MHz
   Current Timing (tCAS-tRCD-tRP-tRAS):    16-20-20-38
   Memory Channels Supported:              2
   Memory Channels Active:                 2
   Command Rate (CR):                      1T
   Read to Read Delay (tRDRD_SC) Same Chipselect: 1T
   Read to Read Delay (tRDRD_SG/TrdrdScL) Same Bank Group: 5T
   Read to Read Delay (tRDRD_SD) Same DIMM: 4T
   Read to Read Delay (tRDRD_DD) Different DIMM: 4T
   Write to Write Delay (tWRWR_SC) Same Chipselect: 1T
   Write to Write Delay (tWRWR_SG/TwrwrScL) Same Bank Group: 5T
   Write to Write Delay (tWRWR_SD) Same DIMM: 6T
   Write to Write Delay (tWRWR_DD) Different DIMM: 6T
   Read to Write Delay (tRDWR_SC) Same Chipselect: 10T
   Read to Write Delay (tRDWR_SG/TrdwrScL) Same Bank Group: 10T
   Read to Write Delay (tRDWR_DG/TrdwrScDlr) Different Bank Group: 10T
   Read to Write Delay (tRDWR_SD) Same DIMM: 10T
   Read to Write Delay (tRDWR_DD) Different DIMM: 10T
   Write to Read Delay (tWRRD_SC) Same Chipselect: 2T
   Write to Read Delay (tWRRD_SG/TwrrdScL) Same Bank Group: 2T
   Write to Read Delay (tWRRD_SD) Same DIMM: 2T
   Write to Read Delay (tWRRD_DD) Different DIMM: 2T
   Read to Precharge Delay (tRTP):         12T
   Write to Precharge Delay (tWTP):        35T
   Write Recovery Time (tWR):              24T
   RAS# to RAS# Delay (tRRD_L):            9T
   RAS# to RAS# Delay (tRRD_S):            6T
   Row Cycle Time (tRC):                   75T
   Refresh Cycle Time (tRFC):              560T
   Four Activate Window (tFAW):            34T

Row: 2 [P0 CHANNEL A/DIMM 1] - 8 GB PC4-25600 DDR4 SDRAM Corsair 
CMK16GX4M2E3200C16

  [General Module Information]
   Module Number:                          2
   Module Size:                            8 GBytes
   Memory Type:                            DDR4 SDRAM
   Module Type:                            Unbuffered DIMM (UDIMM)
   Memory Speed:                           1600.0 MHz (DDR4-3200 / 
PC4-25600)
   Module Manufacturer:                    Corsair
   Module Part Number:                     CMK16GX4M2E3200C16
   Module Revision:                        0.0
   Module Serial Number:                   N/A
   Module Manufacturing Date:              N/A
   Module Manufacturing Location:          0
   SDRAM Manufacturer:                     Samsung
   DRAM Steppping:                         0.0
   Error Check/Correction:                 None
  [Module Characteristics]
   Row Address Bits:                       16
   Column Address Bits:                    10
   Module Density:                         8192 Mb
   Number Of Ranks:                        1
   Number Of Bank Groups:                  4
   Device Width:                           8 bits
   Bus Width:                              64 bits
   Die Count:                              1
   Module Nominal Voltage (VDD):           1.2 V
   Minimum SDRAM Cycle Time (tCKAVGmin):   0.93800 ns (1066 MHz)
   Maximum SDRAM Cycle Time (tCKAVGmax):   1.50000 ns
   CAS# Latencies Supported:               7, 8, 9, 10, 11, 12, 13, 14, 
15, 16, 17, 18, 19, 20, 21, 22, 23, 24
   Minimum CAS# Latency Time (tAAmin):     13.500 ns
   Minimum RAS# to CAS# Delay (tRCDmin):   13.500 ns
   Minimum Row Precharge Time (tRPmin):    13.500 ns
   Minimum Active to Precharge Time (tRASmin): 33.000 ns
   Supported Module Timing at 1066.7 MHz:  15-15-15-36
   Supported Module Timing at 933.3 MHz:   13-13-13-31
   Supported Module Timing at 800.0 MHz:   11-11-11-27
   Supported Module Timing at 666.7 MHz:   9-9-9-22
   Supported Module Timing at 533.3 MHz:   8-8-8-18
   Minimum Active to Active/Refresh Time (tRCmin): 46.500 ns
   Minimum Refresh Recovery Time Delay (tRFC1min): 350.000 ns
   Minimum Refresh Recovery Time Delay (tRFC2min): 260.000 ns
   Minimum Refresh Recovery Time Delay (tRFC4min): 160.000 ns
   Minimum Four Activate Window Delay Time (tFAWmin): 21.000 ns
   Minimum Active to Active Delay Time - Different Bank Group 
(tRRD_Smin): 3.700 ns
   Minimum Active to Active Delay Time - Same Bank Group (tRRD_Lmin): 
5.300 ns
   Minimum CAS to CAS Delay Time - Same Bank Group (tCCD_Lmin): 5.356 ns
  [Features]
   Module Temperature Sensor (TSOD):       Not Supported
   Module Nominal Height:                  31 - 32 mm
   Module Maximum Thickness (Front):       1 - 2 mm
   Module Maximum Thickness (Back):        1 - 2 mm
   Address Mapping from Edge Connector to DRAM: Standard
  [Intel Extreme Memory Profile (XMP)]
   XMP Revision:                           2.0
  [Certified Profile [Enabled]]
   Module VDD Voltage Level:               1.35 V
   Minimum SDRAM Cycle Time (tCKAVGmin):   0.62500 ns (1600 MHz)
   CAS# Latencies Supported:               7, 8, 9, 10, 11, 12, 13, 14, 
15, 16, 17, 18, 19, 20, 21, 22, 23, 24
   Minimum CAS# Latency Time (tAAmin):     10.000 ns
   Minimum RAS# to CAS# Delay (tRCDmin):   12.500 ns
   Minimum Row Precharge Time (tRPmin):    12.500 ns
   Minimum Active to Precharge Time (tRASmin): 23.750 ns
   Supported Module Timing at 1600.0 MHz:  16-20-20-38
   Supported Module Timing at 1466.7 MHz:  15-19-19-35
   Supported Module Timing at 1333.3 MHz:  14-17-17-32
   Supported Module Timing at 1200.0 MHz:  12-15-15-29
   Supported Module Timing at 1066.7 MHz:  11-14-14-26
   Supported Module Timing at 933.3 MHz:   10-12-12-23
   Supported Module Timing at 800.0 MHz:   8-10-10-19
   Supported Module Timing at 666.7 MHz:   7-9-9-16
   Minimum Active to Active/Refresh Time (tRCmin): 36.250 ns
   Minimum Refresh Recovery Time Delay (tRFC1min): 349.000 ns
   Minimum Refresh Recovery Time Delay (tRFC2min): 259.000 ns
   Minimum Refresh Recovery Time Delay (tRFC4min): 159.000 ns
   Minimum Four Activate Window Delay Time (tFAWmin): 22.000 ns
   Minimum Active to Active Delay Time - Different Bank Group 
(tRRD_Smin): 3.750 ns
   Minimum Active to Active Delay Time - Same Bank Group (tRRD_Lmin): 
5.625 ns


<then the same info for each memory module>
-----------------------------------------------------------------------

HWiNFO is doomed by dmidecode -t 6


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