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From: Phil Hobbs <pcdhSpamMeSenseless@electrooptical.net>
Newsgroups: sci.electronics.design
Subject: Re: The other power transistor aiming to dominate the age of SiC
Date: Fri, 6 Sep 2024 15:08:33 -0000 (UTC)
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john larkin <jlarkin_highland_tech> wrote:
> On Fri, 06 Sep 2024 10:13:44 GMT, Jan Panteltje <alien@comet.invalid>
> wrote:
> 
>> The Other Power Transistor Aiming to Dominate the Age of SiC
>> https://www.electronicdesign.com/technologies/power/article/55138019/qorvo-optimizing-high-density-power-with-sic-devices-and-advanced-circuit-design
>> Explore the integration of silicon-carbide (SiC) technology and advanced
>> circuit design to enhance the overall density and efficiency of power converters.
>> See also:
>> https://www.qorvo.com/products/power-solutions/sic-fets
>> 
> 
> I used a Cree SiC fet, in my Pockels Cell driver. As a high-voltage
> switch, the figure of merit    Rdson * Cout   was many times better
> than I could get with any silicon mosfets. The circuit wouldn't have
> worked with silicon.
> 
> But driving the gate was a real nuisance. I went from -5 to +18 in a
> couple of nanoseconds, which took a special GaN driver circuit on its
> own baby board,
> 
> https://www.dropbox.com/scl/fi/y3r0qyo0hkubpc9td02y1/T852C_globbed.JPG?rlkey=gbkhx5zwaisr7e84acf5kuv80&raw=1
> 
> The glob-top is mostly to protect the absurdly fragile EPC GaN fets,
> and give them a bit of extra cooling. Finding the right glob stuff was
> a project of its own.
> 
> There are beginning to be some specific SiC gate drivers, but the
> market seems to be power conversion, so the drivers are fairly slow
> and have gigantic prop delays.
> 
> I note that EPC said that they would never sell packaged parts, but
> now they do.
> 
> 

I used to have an AD databook with an index. The entry for “digital” was
“You must be joking.”

Cheers 

Phil Hobbs 

-- 
Dr Philip C D Hobbs  Principal Consultant  ElectroOptical Innovations LLC /
Hobbs ElectroOptics  Optics, Electro-optics, Photonics, Analog Electronics